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 2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256
1N6817
(MSASC25W100K)
Features
* * * * * *
* *
1N6817R
(MSASC25W100KR)
100 Volts 25 Amps LOW REVERSE LEAKAGE SCHOTTKY DIODE
MAX.
100 100 100 25 (3.3) 120 2 -55 to +175 -55 to +175 1.25 1.35
*
Tungsten schottky barrier Oxide passivated structure Guard ring protection for increased reverse energy capability Epitaxial structure minimizes forward voltage drop Hermetically sealed, low profile ceramic surface mount power package Low package inductance Very low thermal resistance Available as standard polarity (strap is anode: 1N6817) and reverse polarity (strap is cathode: 1N6817R) TXV-level screening (MSASC25W100KV) or S-level (MSASC25W100KS) screening i.a.w. Microsemi internal procedure PS11.50 available
Maximum Ratings @ 25C (unless otherwise specified)
DESCRIPTION
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current, Tc 145C derating, forward current, Tc 145C Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave Peak Repetitive Reverse Surge Current, tp= 1s, f= 1kHz Junction Temperature Range Storage Temperature Range Thermal Resistance, Junction to Case: 1N6817 1N6817R
SYMBOL
VRRM VRWM VR IF(ave) dIF/dT IFSM IRRM Tj Tstg JC
UNIT
Volts Volts Volts Amps Amps/C Amps Amp C C C/W
Mechanical Outline
ThinKeyTM2
Datasheet# MSC1034B August, 2000
1N6817
(MSASC25W100K)
1N6817R
(MSASC25W100KR)
Electrical Parameters
DESCRIPTION Reverse (Leakage) Current Forward Voltage pulse test, pw= 300 s d/c 2% SYMBOL IR25 IR125 VF1 VF2 VF3 VF4 VF7 VF5 VF6 Cj1 Cj2 BVR CONDITIONS VR= 100 Vdc, Tc= 25C VR= 100 Vdc, Tc= 125C IF= 5A, Tc= 25C IF= 10A, Tc= 25C IF= 20A, Tc= 25C IF= 50A, Tc= 25C IF= 100A, TC= 25C IF= 20A, Tc= -55C IF= 20A, Tc= 125C VR= 10 Vdc VR= 5 Vdc IR= 1 mA, Tc= 25C IR= 1 mA, Tc= -55C MIN TYP. 7 2.5 650 730 810 940 1060 925 670 370 500 120 MAX 300 15 725 810 900 1020 1025 800 500 UNIT A mA mV mV mV mV mV mV mV pF pF V V
Junction Capacitance Breakdown Voltage
100 100
Datasheet# MSC1034B August, 2000


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